| 摘要 |
PROBLEM TO BE SOLVED: To provide a sense amplifier operating method as to a semiconductor device equipped with the sense amplifier, which forms a different amplification voltage level by specially changing over a power source voltage to be supplied to the sense amplifier, and to provide the semiconductor device equipped with such sense amplifier. SOLUTION: A power source voltage changeover circuit for changing over the power supply voltage supplied to the sense amplifier is provided to supply a first voltage level for amplifying the information of a memory cell as the power source voltage of the sense amplifier and a second voltage level which has a voltage amplitude larger than that of the first voltage level, becoming a writing voltage to the memory cell before a precharge operation. Deterioration of a device performance due to a high voltage can be prevented since occurrence of noise at the amplification is reduced by supplying the power source voltage in two steps and also an impressed period at the second voltage level becomes short. COPYRIGHT: (C)2007,JPO&INPIT
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