| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferroelectric memory small in circuit scale. SOLUTION: This memory has memory cells having capacitors arranged in a predetermined area, voltage dividing capacitors connected in series, and a voltage forming section to obtain a lowered voltage from the voltage applied to an end of the voltage dividing capacitors. The voltage dividing capacitors are arranged outside the predetermined area, and the memory capacitors and the voltage dividing capacitors are arranged in the state of a grid. COPYRIGHT: (C)2007,JPO&INPIT
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