| 摘要 |
The method of manufacturing a semiconductor device includes forming a p-type anode layer and an anode electrode on one major surface of an n-type semiconductor substrate, irradiating an electron beam to the semiconductor substrate to introduce crystal defects into the semiconductor substrate, grinding the other major surface of semiconductor substrate to reduce the thickness the semiconductor substrate, implanting phosphorus ions from the exposed surface of semiconductor substrate, and irradiating pulsed YAG laser beams by the double pulse technique to the exposed surface, from which the phosphorus ions have been implanted, to activate the implanted phosphorus atoms and to recover the region extending from the exposed surface irradiated with the YAG laser beams to the depth corresponding to 5 to 30% of the total wafer thickness from the defective state caused by the crystal defects introduced therein.
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