| 发明名称 |
METHOD FOR PROTECTING A SEMICONDUCTOR DEVICE FROM CARBON DEPLETION BASED DAMAGE |
| 摘要 |
A method for protecting a semiconductor device from carbon depletion type damage includes enriching an exposed surface of a porous interlevel dielectric material (ILD) with a carbon based material, and implementing a plasma based operation on the porous ILD material. The enriching of the porous ILD material reduces effects of carbon depletion as a result of the plasma based operation.
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| 申请公布号 |
US2007048981(A1) |
申请公布日期 |
2007.03.01 |
| 申请号 |
US20050162219 |
申请日期 |
2005.09.01 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BONILLA GRISELDA;CONTI RICHARD A.;DALTON TIMOTHY J.;FULLER NICHOLAS C.M.;MALONE KELLY;NITTA SATYANARAYANA V.;PONOTH SHOM |
| 分类号 |
H01L21/04 |
主分类号 |
H01L21/04 |
| 代理机构 |
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代理人 |
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| 主权项 |
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