发明名称 |
Semiconductor electronic device |
摘要 |
A semiconductor electronic device includes a buffer layer formed on a substrate, and a semiconductor operating layer that is formed on the buffer layer. The semiconductor operating layer includes a nitride-based compound semiconductor and. The buffer layer includes at least one composite layer that includes a first layer and a second layer. A lattice-constant difference between the first layer and the second layer is equal to or more than 0.2 percent.
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申请公布号 |
US2007045639(A1) |
申请公布日期 |
2007.03.01 |
申请号 |
US20060508921 |
申请日期 |
2006.08.24 |
申请人 |
THE FURUKAWA ELECTRIC CO., LTD. |
发明人 |
KATO SADAHIRO;SATO YOSHIHIRO;YOSHIDA SEIKOH |
分类号 |
H01L21/338;H01L29/778;H01L29/812 |
主分类号 |
H01L21/338 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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