发明名称 Semiconductor electronic device
摘要 A semiconductor electronic device includes a buffer layer formed on a substrate, and a semiconductor operating layer that is formed on the buffer layer. The semiconductor operating layer includes a nitride-based compound semiconductor and. The buffer layer includes at least one composite layer that includes a first layer and a second layer. A lattice-constant difference between the first layer and the second layer is equal to or more than 0.2 percent.
申请公布号 US2007045639(A1) 申请公布日期 2007.03.01
申请号 US20060508921 申请日期 2006.08.24
申请人 THE FURUKAWA ELECTRIC CO., LTD. 发明人 KATO SADAHIRO;SATO YOSHIHIRO;YOSHIDA SEIKOH
分类号 H01L21/338;H01L29/778;H01L29/812 主分类号 H01L21/338
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