A pixel cell array architecture having ion implant regions as isolation regions between adjacent active areas of pixels in the array. In one exemplary embodiment, the invention provides an ion-doped p-well region separating n-type photosensitive areas of neighboring pixel cells. The pixel cells have increased fill factor without encountering the disadvantages associated witih. conventional shallow trench isolation regions.
申请公布号
WO2007024855(A2)
申请公布日期
2007.03.01
申请号
WO2006US32770
申请日期
2006.08.23
申请人
MICRON TECHNOLOGY, INC.;MCKEE, JEFFREY, A.;MAURITZSON, RICHARD