| 摘要 |
Disclosed is a method for manufacturing a semiconductor device having a heat-resistant resin film, which is heavily used in flip chip connections using a solder bump or a gold bump, and an epoxy resin compound arranged as a layer on the heat-resistant resin film. Particularly disclosed is a surface modification method for semiconductor device production, which enables to improve adhesion after long storage especially under high temperature, high humidity conditions, thereby improving reliability of the semiconductor device. Specifically disclosed is a method for manufacturing a semiconductor device having a heat-resistant resin film formed on a semiconductor element and an epoxy resin compound layer arranged on the heat-resistant resin film, wherein a surface of the heat-resistant resin film on which the epoxy resin compound layer is to be arranged is subjected to a plasma process using a nitrogen atom-containing gas containing at least one of nitrogen, ammonia and hydrazine. |
