BtFRIED DOPED REGION FOR VERTICAL ANTI-BLOOMING CONTROL AND CROSS-TALK REDUCTION FOR IMAGERS

摘要

The present invention provides a solid-state imager device (20) having a patterned buried doped region (33) in the substrate (30) , preferably an n+ doped region, that collects excess electrons and thus reduces cross-talk, minimizes blooming of excess electrons, and reduces dark current in a solid-state imager device, and a corresponding fabrication method.