| 摘要 |
PROBLEM TO BE SOLVED: To dispose a back gate electrode forced to have a low resistance under a semiconductor layer to form thereon field effect transistors, while preventing the degradation of the crystal quality of the semiconductor layer to form thereon the field effect transistors. SOLUTION: With respect to a semiconductor device, a buried oxide film 12 is formed on a single-crystal semiconductor substrate 11, and a first single-crystal semiconductor layer 13 constituting a back gate electrode is formed on the buried oxide film 12. Further, a buried oxide film 14 is formed on the first semiconductor layer 13, and second single-crystal semiconductor layers 15a, 15b subjected to a mesa-isolation are laminated on the buried oxide film 14. The film thicknesses of the second semiconductor layers 15a, 15b are made larger than that of the first semiconductor layer 13, and SOI transistors are formed respectively on the second semiconductor layers 15a, 15b. COPYRIGHT: (C)2007,JPO&INPIT
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