| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing silicon wafer for improving productivity by achieving higher flatness without any planarization process such as grinding and lapping or the like which have been essential manufacturing process in the related art. SOLUTION: The method includes, in the following sequence, a single wafer acid etching step 12 for conducting the etching by supplying an etchant with a supply nozzle to the surface of single wafer obtained by slicing a single crystal ingot, and by spreading the etchant supplied by rotating the wafer to the entire part of the surface; and a polishing step 14 for polishing the both sides of the wafer. The etchant used for single wafer etching is the acid etching solution. The acid etching solution is the aqueous solution constituted with hydrofluoric acid, nitric acid and phosphoric acid. The acid etching solution contains, by the mixing rate of weight percentage, HF of 0.5-40%, HNO<SB>3</SB>of 5-50%, and H<SB>3</SB>PO<SB>4</SB>of 5-70%. COPYRIGHT: (C)2007,JPO&INPIT
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