发明名称 DUAL DAMASCENE STRUCTURE AND FABRICATION THEREOF
摘要 A dual damascene structure is described, including a substrate, a dielectric layer, a hard mask layer, a contact and a conductive line. The dielectric layer is located on the substrate, the hard mask layer is on the dielectric layer, the contact is located in the dielectric layer, and a horizontal cross-section of the contact has an asymmetrically rounded outline. The conductive line is in the hard mask layer and the dielectric layer, and is located on and electrically connected to the contact. The conductive line has a laterally swelling portion on an edge portion of the first contact, wherein the borders of the laterally swelling portion and the edge portion are contiguous.
申请公布号 US2007049012(A1) 申请公布日期 2007.03.01
申请号 US20050162154 申请日期 2005.08.31
申请人 HUANG JEN-REN;WENG CHENG-MING;LIN MIAO-CHUN 发明人 HUANG JEN-REN;WENG CHENG-MING;LIN MIAO-CHUN
分类号 H01L21/4763 主分类号 H01L21/4763
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