Modified hybrid orientation technology

摘要

A semiconductor process and apparatus includes forming first and second metal gate electrodes ( 151, 161 ) over a hybrid substrate ( 17 ) by forming the first gate electrode ( 151 ) over a first high-k gate dielectric ( 121 ) and forming the second gate electrode ( 161 ) over at least a second high-k gate dielectric ( 122 ) different from the first gate dielectric ( 121 ). By forming the first gate electrode ( 151 ) over a first SOI substrate ( 90 ) formed by depositing (100) silicon and forming the second gate electrode ( 161 ) over an epitaxially grown (110) SiGe substrate ( 70 ), a high performance CMOS device is obtained which includes high-k metal PMOS gate electrodes ( 161 ) having improved hole mobility.