Tantalum- and Niobium- compounds and their use in Chemical Vapour deposition (CVD)

摘要

Tantalum- (Ta) or niobium (Nb) compounds (I) are new. Tantalum- (Ta) or niobium (Nb) compounds of formula (I) are new. M : Ta or Nb; R 1>, R 2>optionally substituted 1-12C alkyl, 5-12C cycloalkyl, 6-10C aryl, 1-alkenyl, 2-alkenyl, 3-alkenyl, triorganosilyl residue (-SiR 3) or amino residue (NR 2); R : 1-4C alkyl; R 3>substituted 1-8C alkyl, 5-10C cycloalkyl, 6-14C aryl, SiR 3or NR 2; R 4>Cl, Br, I or NH-R 5>; R 5>substituted 1-8C alkyl-, 5-10C cycloalkyl, 6-10C aryl or O-R 6>; R 6>substituted 1-11C alkyl, 5-10C cycloalkyl, 6-10C aryl, -SiR 3, BH 4, indenyl residue, benzyl residue, cyclopentadienyl residue or -NRo-NRaRb (hydrazido(-1)); Ro, Ra, Rb : 1-4C alkyl, CH 2SiMe 3, pseudohalogenide (-N 3) or silylamide (-N(SiMe 3) 2); and R 7>, R 8>H, optionally substituted 1-12C alkyl, 5-12C cycloalkyl or 6-10C aryl. Independent claims are also included for: (1) a tantalum nitride layer; (2) a substrate showing tantalum nitride layer obtained from (I); (3) a niobium nitride layer; and (4) a substrate showing niobium nitride layer obtained from (I). [Image].