PHOTORESIST COMPOSITION FOR DEEP ULTRAVIOLET LITHOGRAPHY.

摘要

THE PRESENT INVENTION RELATES TO A NOVEL PHOTORESIST COMPOSITION SENSITIVE IN THE DEEP ULTRAVIOLET REGION AND A METHOD OF PROCESSING THE NOVEL PHOTORESIST, WHERE THE PHOTORESIST COMPRISES A NOVEL COPOLYMER, A PHOTOACTIVE COMPONENT, AND A SOLVENT. THE NOVEL COPOLYMER COMPRISES A UNIT DERIVED FROM AN ETHYLENICALLY UNSATURATED COMPOUND CONTAINING AT LEST ONE CYANO FUNCTIONALITY AND A UNIT DERIVED FROM AN UNSATURATED CYCLIC NON AROMATIC COMPOUND.