发明名称 |
Thin film transistor and method of fabricating the same |
摘要 |
<p>A thin film transistor and a method of fabricating the same are disclosed. The method includes: sequentially depositing an amorphous silicon layer, a capping layer, and a metal catalyst layer; annealing the entire layer to crystallize the amorphous silicon layer into a polysilicon layer; removing the capping layer; and, when the capping layer is perfectly removed to make a contact angle with a liquid droplet on the polysilicon layer within a range of about 40 to about 80°, forming a semiconductor layer using the polysilicon layer.</p> |
申请公布号 |
EP1758156(A2) |
申请公布日期 |
2007.02.28 |
申请号 |
EP20060254464 |
申请日期 |
2006.08.25 |
申请人 |
SAMSUNG MOBILE DISPLAY CO., LTD. |
发明人 |
YANG, TAE-HOON;LEE, KI-YONG;SEO, JIN-WOOK;PARK, BYOUNG-KEON |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|