| 摘要 |
A semiconductor laser diode and a fabrication method thereof are provided to prevent multiple light modes in a vertical direction by suppressing the increase of a threshold current and reducing internal loss. A first clad layer(102) is formed on a substrate. A bottom light guide layer(103a) is formed on the first clad layer. An active layer(104) is formed on the bottom light guide layer. A top light guide layer(103b) is formed on the active layer. A second clad layer(105) is formed on the top light guide layer. The first clad layer includes an n type doped layer formed on the substrate, and a first undoped layer(102b) which is formed on the n type doped layer and adjacent to the bottom light guide layer. The second clad layer includes a second undoped layer(105b) which is formed on the top light guide layer and adjacent to the top light guide layer, and a p type doped layer formed on the second undoped layer. |
