THICKNESS TAILORING OF WAFER BONDED AlxGayInzN STRUCTURES BY LASER MELTING,申请号KR20000005426-传众专利搜索

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发明名称	THICKNESS TAILORING OF WAFER BONDED AlxGayInzN STRUCTURES BY LASER MELTING
摘要
申请公布号	KR100688763(B1)	申请公布日期	2007.02.28
申请号	KR20000005426	申请日期	2000.02.03
申请人		发明人
分类号	H01L33/00;H01L33/10;H01L33/46;H01S5/02;H01S5/183;H01S5/323	主分类号	H01L33/00
代理机构		代理人
主权项
地址

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