发明名称 |
METHOD FOR MANUFACTURING THREE DIMENSIONAL PDMS STRUCTURE |
摘要 |
<p>A method for forming a three-dimensional PDMS(polydimethysiloxane) structure is provided to form a three-dimensional having an arbitrary shape with a small alignment error by using a soft PDMS bonding of a PDMS layer whose part is hardened. A first mask layer pattern is formed on a semiconductor substrate. A second mask layer pattern is formed on the resultant structure. The semiconductor substrate is etched by using the second mask layer pattern as a mask. The second mask layer pattern is removed, and the semiconductor substrate is etched by using the first mask layer pattern as a mask to form a step. A planarized first PDMS layer pattern is formed on the semiconductor substrate, exposing the upper surface of the step. A sacrificial layer pattern is formed on the step and the first PDMS layer pattern. A second PDMS layer hardened to a predetermined degree is bonded to the upper part of the resultant structure. The sacrificial layer pattern and the semiconductor substrate are removed. A capping PDMS layer is formed on the surface of the second PDMS layer exposed by the removal of the semiconductor substrate.</p> |
申请公布号 |
KR100691732(B1) |
申请公布日期 |
2007.02.28 |
申请号 |
KR20060017101 |
申请日期 |
2006.02.22 |
申请人 |
SEOUL NATIONAL UNIVERSITY INDUSTRY FOUNDATION |
发明人 |
CHUN, KUK JIN;CHA, JUNG HUN;KIM, JIN SEOK |
分类号 |
H01L21/312;H01L21/027;H01L21/20 |
主分类号 |
H01L21/312 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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