发明名称 METHOD FOR MANUFACTURING THREE DIMENSIONAL PDMS STRUCTURE
摘要 <p>A method for forming a three-dimensional PDMS(polydimethysiloxane) structure is provided to form a three-dimensional having an arbitrary shape with a small alignment error by using a soft PDMS bonding of a PDMS layer whose part is hardened. A first mask layer pattern is formed on a semiconductor substrate. A second mask layer pattern is formed on the resultant structure. The semiconductor substrate is etched by using the second mask layer pattern as a mask. The second mask layer pattern is removed, and the semiconductor substrate is etched by using the first mask layer pattern as a mask to form a step. A planarized first PDMS layer pattern is formed on the semiconductor substrate, exposing the upper surface of the step. A sacrificial layer pattern is formed on the step and the first PDMS layer pattern. A second PDMS layer hardened to a predetermined degree is bonded to the upper part of the resultant structure. The sacrificial layer pattern and the semiconductor substrate are removed. A capping PDMS layer is formed on the surface of the second PDMS layer exposed by the removal of the semiconductor substrate.</p>
申请公布号 KR100691732(B1) 申请公布日期 2007.02.28
申请号 KR20060017101 申请日期 2006.02.22
申请人 SEOUL NATIONAL UNIVERSITY INDUSTRY FOUNDATION 发明人 CHUN, KUK JIN;CHA, JUNG HUN;KIM, JIN SEOK
分类号 H01L21/312;H01L21/027;H01L21/20 主分类号 H01L21/312
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