发明名称 Substrate processing apparatus and substrate processing method
摘要 <p>Thermal processing unit sections each with ten tiers and coating processing unit sections each with five tiers are disposed around a first main wafer transfer section and a second main wafer transfer section, and in the thermal processing unit section, the influence of the time required for substrate temperature regulation processing on a drop in throughput can be reduced greatly by transferring the wafer W while the temperature of the wafer W is being regulated by a temperature regulation and transfer device. &lt;IMAGE&gt;</p>
申请公布号 EP1094501(B1) 申请公布日期 2007.02.28
申请号 EP20000309179 申请日期 2000.10.18
申请人 TOKYO ELECTRON LIMITED 发明人 UEDA, ISSEI;HAYASHI, SHINICHI;IIDA, NARUAKI;MATSUYAMA, YUJI;DEGUCHI, YOICHI
分类号 H01L21/00;H01L21/02;G07C9/00;G08G3/00;H01L21/677 主分类号 H01L21/00
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