| 摘要 |
A CAPACITOR CONSISTING OF A STORAGE ELECTRODE (19), A CAPACITOR DIELECTRIC FILM (20) AND A PLATE ELECTRODE (21) IS FORMED IN A TRENCH FORMED THROUGH DIELECTRIC FILMS (6, 8, 10 AND 12) STACKED ON A SEMICONDUCTOR SUBSTRATE (1) AND A BURIED WIRING LAYERS (9 AND 11) ARE FORMED UNDER THE CAPACITOR. AS THE CAPACITOR IS FORMED NOT IN THE SEMICONDUCTOR SUBSTRATE BUT OVER IT, THERE IS ROOM IN AREA IN WHICH THE CAPACITOR CAN BE FORMED AND THE DIFFICULTY OF FORMING WIRING IS REDUCED BY USING THE WIRING LAYERS (9 AND 11) FOR A GLOBAL WORD LINE AND A SELECTOR LINE.
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