发明名称 DIGTAL TEMPERATURE DETECTING CIRCUIT IN SEMICONDUCTOR MEMORY DEVICE WITH CONTROLLABLE OFFSET DATA
摘要 A digital temperature detecting circuit in a semiconductor memory device with controllable offset data is provided to control easily the offset data by inputting input data. A digital temperature generation unit senses internal temperature of a semiconductor device and converts the sensed temperature to recognition data of recognition data codes. The recognition data have a self-response interval. An offset shifting unit(300) shifts the recognition data of the recognition data codes to standard data of standard data codes by using the offset data. An offset generation unit generates offset data according to an external control.
申请公布号 KR100691374(B1) 申请公布日期 2007.02.28
申请号 KR20060006186 申请日期 2006.01.20
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 NAM, JEONG SIK;CHUN, BYUNG KWAN
分类号 H01L21/02 主分类号 H01L21/02
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