发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要 <p>A METHOD OF REALIZING AN ACTIVE MATRIX DISPLAY DEVICE HAVING FLEXIBILITY IS PROVIDED. FURTHER,A METHOD FOR REDUCING PARASITIC CAPACITANCE BETWEEN WIRINGS FORMED ON DIFFERENT LAYERS IS PROVIDED.AFTER FIXING A SECOND SUBSTRATE (1110) TO A THIN FILM DEVICE FORMED ON A FIRST SUBSTRATE (1101) BY BONDING, THE FIRST SUBSTRATE (1101) IS REMOVED, AND WIRINGS AND THE LIKE ARE FORMED IN THE THIN FILM DEVICE.THE SECOND SUBSTRATE (1110) IS REMOVED NEXT, AND AN ACTIVE MATRIX DISPLAY DEVICE HAVING FLEXIBILITY IS FORMED. FURTHER, PARASITIC CAPACITANCE CAN BE REDUCED BY FORMING WIRINGS, AFTER REMOVING THE FIRST SUBSTRATE (1101), ON THE SIDE IN WHICH A GATE ELECTRODE OVER AN ACTIVE LAYER IS NOT FORMED.(FIG 4A &5B)</p>
申请公布号 MY128651(A) 申请公布日期 2007.02.28
申请号 MY2001PI04272 申请日期 2001.09.12
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 AKIRA ISHIKAWA
分类号 H01L29/00;G02F1/1333;G02F1/1368;H01L21/77;H01L21/84 主分类号 H01L29/00
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