CERIUM OXIDE ABRASIVE AND SLURRY CONTAINING THE SAME

摘要

Disclosed are a cerium oxide abrasive for selectively polishing various SiO<SUB>2 </SUB>films and SiO<SUB>2</SUB>-Si<SUB>3</SUB>N<SUB>4 </SUB>films; and a slurry containing the same. The cerium oxide abrasive and the polishing slurry of the present invention have a high polishing rate and are also free from microscratches in a polished surface upon polishing since polycrystalline cerium oxide having a mean crystalline particle size of 5 nm or less is synthesized by using hexagonal cerium carbonate having a hexagonal crystal structure as a raw material of cerium.