发明名称 |
Manufacturing process for a flash memory and flash memory thus produced |
摘要 |
The invention relates to a production process for a flash memory from a semi-conductor substrate fitted with at least two adjacent rows of precursor stacks of floating gate transistors, the precursor stacks being at least partially covered by a protective resin and being separated by a formation zone for a source line. The process includes forming a trench in the formation zone for the source line by an attack of this zone and of the protective resin. The result of the attack step includes a deposit of residue from the resin below the precursor stacks. The residue deposit is removed. A source line is implanted in the formation zone below the precursor stacks. This process enables the time needed for erasing the memory to be reduced.
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申请公布号 |
US7183160(B2) |
申请公布日期 |
2007.02.27 |
申请号 |
US20040763044 |
申请日期 |
2004.01.22 |
申请人 |
STMICROELECTRONICS (ROUSSET) SAS |
发明人 |
PIZZUTO OLIVIER;LAFFONT ROMAIN;MIRABEL JEAN-MICHEL |
分类号 |
H01L21/336;H01L21/28;H01L21/8247;H01L27/115;H01L29/423 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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