发明名称 |
Semiconductor device including square type storage node and method of manufacturing the same |
摘要 |
A semiconductor device including square type storage nodes and a method of manufacturing the same. Word lines are formed on a semiconductor substrate Bit lines are formed separated from the word lines and perpendicular to the word lines. Active regions are defined to have a major axis slanted to the word line direction and the bit line direction. Storage nodes of capacitors are arranged along the word lines overlapping the word lines and arranged in a zigzag pattern that centers upon the bit lines. Storage node contacts are formed to electrically connect the active regions to the storage nodes, while being self-aligned with the bit lines, separated from each other on the word lines, and with a larger line width in the word line direction than the bit line direction to overlap large areas of the storage nodes.
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申请公布号 |
US7183603(B2) |
申请公布日期 |
2007.02.27 |
申请号 |
US20050096852 |
申请日期 |
2005.03.31 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK JE-MIN |
分类号 |
H01L27/108;H01L21/02;H01L21/8242;H01L27/02;H01L29/76 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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