发明名称 Semiconductor device including square type storage node and method of manufacturing the same
摘要 A semiconductor device including square type storage nodes and a method of manufacturing the same. Word lines are formed on a semiconductor substrate Bit lines are formed separated from the word lines and perpendicular to the word lines. Active regions are defined to have a major axis slanted to the word line direction and the bit line direction. Storage nodes of capacitors are arranged along the word lines overlapping the word lines and arranged in a zigzag pattern that centers upon the bit lines. Storage node contacts are formed to electrically connect the active regions to the storage nodes, while being self-aligned with the bit lines, separated from each other on the word lines, and with a larger line width in the word line direction than the bit line direction to overlap large areas of the storage nodes.
申请公布号 US7183603(B2) 申请公布日期 2007.02.27
申请号 US20050096852 申请日期 2005.03.31
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK JE-MIN
分类号 H01L27/108;H01L21/02;H01L21/8242;H01L27/02;H01L29/76 主分类号 H01L27/108
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