| 发明名称 |
Manufacturing method of semiconductor device |
| 摘要 |
After an upper electrode protective film is formed such that it is in a firm contact with ruthenium film of the upper electrode without damaging the ruthenium film, the upper electrode is etched, thereby, a MIM capacitor is obtained in which leak current is not increased due to oxidation of the ruthenium film of the upper electrode.
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| 申请公布号 |
US7183170(B2) |
申请公布日期 |
2007.02.27 |
| 申请号 |
US20040998804 |
申请日期 |
2004.11.30 |
| 申请人 |
ELPIDA MEMORY, INC. |
发明人 |
NAKAMURA YOSHITAKA;KAWAGOE TSUYOSHI;SAKUMA HIROSHI;ASANO ISAMU;KUROKI KEIJI;GOTO HIDEKAZU;IIJIMA SHINPEI |
| 分类号 |
C23C16/40;H01L21/20;H01L21/02;H01L21/316;H01L21/3213;H01L21/8242;H01L27/108 |
主分类号 |
C23C16/40 |
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