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摘要

The circuit has a set of memory cells connected in series between a ground line and a bit line. A resistance memory unit (3) has an anode electrode and a cathode electrode, and a drive transistor is connected with the unit. A pair of changeover switch is arranged respectively at one end of the series of memory cells alternately to produce a connection between the series-connected memory cells and the ground and the bit lines. Independent claims are also included for the following: (A) a method for accessing a set of memory cells connected in series between ground lines (B) a memory device comprising a set of memory cells connected in series between ground lines.