发明名称 |
Gallium nitride (GaN)-based semiconductor light emitting diode and method for manufacturing the same |
摘要 |
Disclosed are a GaN-based semiconductor light emitting diode and a method for manufacturing the same. The GaN-based semiconductor light emitting diode includes a substrate on which a GaN-based semiconductor material is grown; a lower clad layer formed on the substrate, and made of a first conductive GaN semiconductor material; an active layer formed on a designated portion of the lower clad layer, and made of an undoped GaN semiconductor material; an upper clad layer formed on the active layer, and made of a second conductive GaN semiconductor material; an alloy layer formed on the upper clad layer, and made of an alloy selected from the group consisting of La-based alloys and Ni-based alloys; and an TCO layer formed on the alloy layer. The alloy layer has a high transmittance and forms Ohmic contact, thus reducing a contact resistance.
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申请公布号 |
US7183579(B2) |
申请公布日期 |
2007.02.27 |
申请号 |
US20040811808 |
申请日期 |
2004.03.30 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
CHAE SEUNG WAN;YOON SUK KIL |
分类号 |
H01L27/15;H01L33/06;H01L33/30;H01L33/42 |
主分类号 |
H01L27/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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