发明名称 |
Method for making a semiconductor device that includes a metal gate electrode |
摘要 |
A method for making a semiconductor device is described. That method comprises forming a hard mask and an etch stop layer on a patterned sacrificial gate electrode layer. After first and second spacers are formed on opposite sides of that patterned sacrificial layer, the patterned sacrificial layer is removed to generate a trench that is positioned between the first and second spacers. At least part of the trench is filled with a metal layer.
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申请公布号 |
US7183184(B2) |
申请公布日期 |
2007.02.27 |
申请号 |
US20030748545 |
申请日期 |
2003.12.29 |
申请人 |
INTEL CORPORATION |
发明人 |
DOCZY MARK L.;BRASK JUSTIN K.;KAVALIEROS JACK;SHAH UDAY;BARNS CHRIS E.;CHAU ROBERT S. |
分类号 |
H01L21/3205;H01L21/28;H01L21/336;H01L21/8238;H01L29/49 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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