| 摘要 |
A method for fabricating a semiconductor device is disclosed. In the method, a buffer oxide film and a nitride film are formed on a semiconductor substrate in succession, an opening is formed in the nitride film and the buffer oxide film for exposing a field region of the semiconductor substrate, the expose semiconductor substrate is wet etched with dilute HF solution and irradiated with a UV beam to form a trench with rounded upper edges and lower corners. Then, an oxide film is gap filled in the trench, the oxide film is planarized, and the nitride film and the buffer oxide film are removed to expose an active region of the semiconductor substrate. The present invention can moderate field concentrations at the upper edges and lower corners of the trench, reduce a leakage current from the semiconductor device, and improve electrical characteristics and/or yield of the semiconductor device.
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