发明名称 |
Chemical vapor deposition metallization processes and chemical vapor deposition apparatus used therein |
摘要 |
CVD metallization processes and CVD apparatus used therein are provided. The processes include forming a barrier metal layer on a semiconductor substrate and cooling the semiconductor substrate having the barrier metal layer without breaking vacuum. An additional metal layer may be formed on the cooled barrier metal layer. The in-situ cooling process is preferably performed inside a cooling chamber installed between first and second transfer chambers, which are separated from each other. The barrier metal layer may be formed inside a CVD process chamber attached to the first transfer chamber, and the additional metal layer may be formed inside another CVD process chamber attached to the second transfer chamber.
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申请公布号 |
US7183207(B2) |
申请公布日期 |
2007.02.27 |
申请号 |
US20040855114 |
申请日期 |
2004.05.26 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KANG DOO-WON;LEE KAP-SOO;LEE HYUN-JONG |
分类号 |
C23C16/14;H01L21/44;H01L21/205;H01L21/28;H01L21/285;H01L21/768 |
主分类号 |
C23C16/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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