发明名称 Process for reducing particle formation during etching
摘要 A process for reducing the formation of potential device-contaminating particles in a process chamber, particularly an etch chamber or a pre-clean chamber used to pre-clean substrates prior to a PVD or other process. The process chamber conventionally includes multiple antennae, the purpose of which is to conduct bias power from a bias power source to a substrate supported on a pedestal assembly. According to the process of the invention, the antennae are removed from the pedestal assembly. Accordingly, the antennae, no longer present in the chamber during substrate processing, are capable of neither generating potential device-contaminating particles nor causing electrical arcing between the pedestal assembly and the chamber wall or other elements in the process chamber, leading to operational power loss.
申请公布号 US7182880(B2) 申请公布日期 2007.02.27
申请号 US20040813785 申请日期 2004.03.30
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 CHOU WEN-CHI;LI KUANG-YA
分类号 B44C1/22;B08B7/00;C23C14/02;H01J37/32;H01L21/00;H01L21/3065 主分类号 B44C1/22
代理机构 代理人
主权项
地址