发明名称 |
Highly efficient segmented word line MRAM array |
摘要 |
In an MRAM array based on MTJs, the size of segmented word line select transistors and their associated connections become a significant overhead, especially when the operating point is chosen deep along the hard axis of the asteroid curve. This problem has been overcome by placing the big segmented word line select transistors under the MTJ array and reducing the overall MRAM cell array down to a level comparable to a simple Cross Point MRAM array.
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申请公布号 |
US7184302(B2) |
申请公布日期 |
2007.02.27 |
申请号 |
US20050093613 |
申请日期 |
2005.03.30 |
申请人 |
APPLIED SPINTADNICS, INC. |
发明人 |
YANG HSU KAI;WANG PO-KANG;SHI XIZENG |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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