| 摘要 |
A semiconductor device having a recess channel is provided to avoid an interference problem between adjacent transistors by forming a drain region having a smaller depth with respect to a source region. A semiconductor substrate(200) is defined by an isolation layer in which a groove is formed by gate formation regions, having an active region where a portion between the grooves is recessed to have a smaller depth with respect to the groove. A recess gate is formed on the groove. A source region(S) is formed in the active region which is not recessed. A drain region(D) is formed in the active region that is recessed by a smaller depth with respect to a groove between the grooves. A channel ion implantation region is formed in the substrate on the bottom of the groove.
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