FORMING METHOD FOR METAL SILICIDE LAYER AND FABRICATING METHOD FOR SEMICONDUCTOR DEVICE USING THE SAME

摘要

A method for forming a metal silicide layer is provided to guarantee reliability of a semiconductor device by improving thermal stability while effectively reducing a metal silicide layer to a thin film. A PVD(physical vapor deposition)-metal layer is deposited on a silicon-containing layer by a PVD method while a part of the PVD-metal layer in contact with the silicon-containing layer is silicidized(S10). The PVD-metal layer that is not silicidized is eliminated(S20). A CVD(chemical vapor deposition)-metal layer is deposited on the silicidized PVD-metal layer by a CVD method(S30). A part of the CVD-metal layer in contact with the silicidized PVD-metal layer is silicidized by a first heat treatment(S40). The CVD-metal layer which is not silicidized is removed(S50). The silicidized PVD-metal layer and the silicidized CVD-metal layer are silicidized by a second heat treatment at a temperature higher than that of the first heat treatment(S60). The PVD-metal layer is one selected from a group of Co, Ti and Ni. The CVD-metal layer is Co.