Method of fabricating dual damascene interconnections of microelectronic device using hybrid low k-dielectric and carbon-free inorganic filler

摘要

A method of fabricating dual damascene interconnections is provided. A dual damascene region is formed in a hybrid dielectric layer having a dielectric constant of 3.3 or less, and a carbon-free inorganic material is used as a via filler. The present invention improves electrical properties of dual damascene interconnections and minimizes defects.