发明名称 |
Parallel electrode memory |
摘要 |
A series of address lines extend in a first direction through at least two layers of memory material spaced apart in the first direction. The memory material may be a ferroelectric polymer in one embodiment. The arrangement of lines and layers may increase the density of a memory in one embodiment.
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申请公布号 |
US7184289(B2) |
申请公布日期 |
2007.02.27 |
申请号 |
US20030712205 |
申请日期 |
2003.11.12 |
申请人 |
INTEL CORPORATION |
发明人 |
ANDIDEH EBRAHIM;COULSON RICHARD L. |
分类号 |
G11C5/02;G11C5/06;G11C8/02;G11C11/22 |
主分类号 |
G11C5/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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