发明名称 Parallel electrode memory
摘要 A series of address lines extend in a first direction through at least two layers of memory material spaced apart in the first direction. The memory material may be a ferroelectric polymer in one embodiment. The arrangement of lines and layers may increase the density of a memory in one embodiment.
申请公布号 US7184289(B2) 申请公布日期 2007.02.27
申请号 US20030712205 申请日期 2003.11.12
申请人 INTEL CORPORATION 发明人 ANDIDEH EBRAHIM;COULSON RICHARD L.
分类号 G11C5/02;G11C5/06;G11C8/02;G11C11/22 主分类号 G11C5/02
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