发明名称 Delay locked loop circuit for internally correcting duty cycle and duty cycle correction method thereof
摘要 A delay locked loop (DLL) circuit having a duty cycle corrector (DCC) that has a broad range of duty cycle correction, consumes only a small amount of power, has few restrictions on operating frequency, and improves the characteristics of a memory device is described. The delay locked loop circuit includes an additional loop for duty cycle correction as well as loops for controlling a rising edge and a falling edge of output signals. Thus, the delay locked loop circuit can internally correct the duty cycle without the use of a phase blender.
申请公布号 US7184509(B2) 申请公布日期 2007.02.27
申请号 US20030619821 申请日期 2003.07.14
申请人 SAMSUNG ELCTRONICS CO., LTD. 发明人 CHO GEUN-HEE;KIM KYU-HYOUN
分类号 G06F1/04;H03D3/24;G11C11/407;H03K5/04;H03K5/13;H03K5/156;H03L7/06;H03L7/08;H03L7/081;H03L7/089;H04L7/033 主分类号 G06F1/04
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