Integration scheme for using silicided dual work function metal gates

摘要

The present invention provides a method for manufacturing a semiconductor device and a method for manufacturing an integrated circuit including the semiconductor device. The method for manufacturing the semiconductor device, among other possible steps, includes forming a polysilicon gate electrode ( 250 ) over a substrate ( 210 ) and forming source/drain regions ( 610 ) in the substrate ( 210 ) proximate the polysilicon gate electrode ( 250 ). The method further includes forming a protective layer ( 710 ) over the source/drain regions ( 610 ) and the polysilicon gate electrode ( 250 ), then removing the protective layer ( 710 ) from over a top surface of the polysilicon gate electrode ( 250 ) while leaving the protective layer ( 710 ) over the source/drain regions ( 250 ). After the protective layer ( 710 ) has been removed from over the top surface of the polysilicon gate electrode ( 250 ), the polysilicon gate electrode ( 250 ) is silicided to form a silicided gate electrode ( 1310 ). The protective layer ( 710 ) is also removed from over the source/drain regions ( 610 ) and source/drain contact regions ( 1610 ) are formed.