发明名称 |
Metal line having an increased resistance to electromigration along an interface of a dielectric barrier layer by implanting material into the metal line |
摘要 |
During the formation of a metallization layer of a semiconductor device, a cap layer is formed above a metal line and subsequently an implantation process is performed so as to modify the metal in the vicinity of the interface between the cap layer and the metal line. Consequently, an improved behavior in view of electromigration of the metal line may be obtained, thereby increasing device reliability.
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申请公布号 |
US7183629(B2) |
申请公布日期 |
2007.02.27 |
申请号 |
US20040813223 |
申请日期 |
2004.03.30 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
ENGELMANN HANS-JUERGEN;ZSCHECH EHRENFRIED;HUEBLER PETER |
分类号 |
H01L21/4763;H01L21/768;H01L23/522;H01L23/532 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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