| 摘要 |
A semiconductor device is provided to increase the pattern of a rare region by making a trench have a bottom surface of an uneven structure such that the trench is disposed in a rare region where devices are not densely arranged on a semiconductor substrate and by forming a dummy pattern on an isolation layer. A trench is formed in a semiconductor substrate(100) which is divided into a dense region(B) and a rare region(A) according to a pattern density of a device. A plurality of protrusions(107) of square type are formed on the bottom surface of the trench in the rare region. The trench in the dense region has a flat bottom surface. The trench in the semiconductor substrate is filled with an oxide layer to form an isolation layer. A gate insulation layer(61,62) is formed on the semiconductor substrate existing between the isolation layers. A gate electrode(71,72) is formed on the gate insulation layer. A dummy electrode is formed between the plurality of protrusions formed on the bottom surface of the trench, existing on the isolation layer in the rare region. A spacer(81,82) is formed on the lateral surfaces of the gate insulation layer and the gate electrode. An insulation layer(110) is flatly formed on the front surface of the semiconductor substrate, having a contact hole(101,102). The inside of the contact hole is filled with a metal interconnection(111,112).
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