METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method for fabricating a semiconductor device is provided to improve the electrical characteristic of a semiconductor device by completely removing a photoresist layer of an abnormal pattern that is previously formed to perform a photoresist layer rework. A photoresist layer is formed on a semiconductor substrate(100) including a conductive layer. The photoresist layer is removed by a first ashing process using plasma. The resultant photoresist layer is eliminated by using a scrubber. The scrubber injects deionized water while rotating at 1000~3000 RPM(revolution per minute). A chemical cleaning process is performed on the resultant structure by using an organic chemical processing agent. A QDR(quick dump rinse) process is performed on the resultant semiconductor substrate while injecting deionized water. A final rinse process is performed on the resultant semiconductor substrate by applying deionized water by an overflow method. The resultant semiconductor substrate is dried. The photoresist layer is removed by a second ashing process using plasma.