发明名称 Nonvolatile semiconductor storage device and row-line short defect detection method
摘要 A current-path isolating circuit is provided in a row decoder circuit that selects a part of the plurality of row lines of a memory array and that selectively provides a selected row line with a voltage level different from that for other row lines. In a test mode different from a normal operation mode, the current-path isolating circuit isolates a current path in the device into a first current path for a current flowing through the row line selected and a second current path for a current not flowing through the row line but flowing through the row decoder circuit. The current path isolated is formed to supply a testing voltage to the selected row line from a testing voltage source.
申请公布号 US7184305(B2) 申请公布日期 2007.02.27
申请号 US20030718440 申请日期 2003.11.19
申请人 SHARP KABUSHIKI KAISHA 发明人 TANNO SHOICHI
分类号 G01R31/28;G11C16/06;G11C16/00;G11C16/02;G11C29/02;G11C29/04 主分类号 G01R31/28
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