| 摘要 |
The semiconductor output circuit of the invention has an insulated gate transistor including a first terminal, a second terminal and a gate terminal, a conductive state of the insulated gate transistor being controlled by a drive circuit connected to the gate terminal, a capacitive element and a first resistor connected in series between the second terminal and the gate terminal, and a second resistor connected between the gate terminal and the first terminal. The insulated gate transistor has a cell area formed on a semiconductor substrate, in which a plurality of unit cells each defining a unit transistor connected between the first and second terminals are laid out. The second resistor has such a resistance that all of the unit transistors defined by the unit cells are turned on uniformly when electrostatic discharge is applied to the first or second terminal.
|
