| 摘要 |
<p>A semiconductor device, which is capable of suppressing interfacial breakdown between a solder ball and a conductive film, is provided. The semiconductor device of the present invention, when "a" is distance between a terminal part of the solder ball 108 in a face coming into contact with an insulating resin layer 105 and an upper periphery of a via 104 , and "b" is distance between a terminal part of the UBM film 107 and the upper periphery of the via 104 , the semiconductor device is made to fulfill with 0<a/b<=2.</p> |
