| 摘要 |
A method and a circuit for controlling precharging of a local I/O line of a semiconductor memory device are provided to improve a data writing time and prevent the decrease of a voltage level by using both an external voltage source and a cell voltage source as an operation voltage source. A circuit for controlling precharging of a local I/O line of a semiconductor memory device includes a first precharge unit(50), a second precharge unit(60), and a precharge control unit(70). The circuit controls equalizing and precharging of a local I/O line pair. The first precharge unit is arranged between the local I/O lines and precharges the local I/O line by using a first voltage source during a predetermined time in a precharge period. The second precharge unit is arranged between the local I/O lines and performs equalizing and precharging of the local I/O lines by using a second voltage source during the precharge period. The precharge control unit generates precharge driving signals for driving the first and second precharge units.
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