| 摘要 |
A method for manufacturing a semiconductor device is provided to reduce the number of mask processes by using an aluminum layer of a metal line as a bonding pad. A semiconductor substrate(22) including a pad part, a fuse part, and an edge part of a chip is prepared. The pad part, the fuse part, and the edge part include lower patterns. A Cu layer(41) for a metal line is formed on the pad part. The metal line is formed by forming an Al layer(42) on the Cu layer. A bonding pad including the Al layer is formed. A passivation layer(44) is formed on the entire surface of the substrate. A photoresist pattern is formed on the Al layer of the pad part, the fuse part, and the edge part on the passivation layer. The exposed passivation layer is etched by using the photoresist pattern as an etch mask.
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