Liftoff process for thin photoresist

摘要

A method is invented for processing a thin-film head/semiconductor wafer. A layer of polymer is applied onto a wafer. A layer of dielectric material is added above the polymer layer. A layer of photoresist is added above the dielectric layer. The photoresist layer is patterned using a photolithography process. Exposed portions of the dielectric layer are removed. Exposed portions of the polymer layer are removed. Exposed portions of the wafer are removed. The polymer layer and any material thereabove is removed after hard bias/leads deposition.