发明名称 |
System and method for hydrogen exfoliation gettering |
摘要 |
A hydrogen (H) exfoliation gettering method is provided for attaching fabricated circuits to receiver substrates. The method comprises: providing a Si substrate; forming a Si active layer overlying the substrate with circuit source/drain (S/D) regions; implanting a p-dopant into the S/D regions; forming gettering regions underling the S/D regions; implanting H in the Si substrate, forming a cleaving plane (peak concentration (Rp) H layer) in the Si substrate about as deep as the gettering regions; bonding the circuit to a receiver substrate; cleaving the Si substrate along the cleaving plane; and binding the implanted H underlying the S/D regions with p-dopant in the gettering regions, as a result of post-bond annealing.
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申请公布号 |
US7183179(B2) |
申请公布日期 |
2007.02.27 |
申请号 |
US20040991120 |
申请日期 |
2004.11.16 |
申请人 |
SHARP LABORATORIES OF AMERICA, INC. |
发明人 |
DROES STEVEN R.;TAKAFUJI YUTAKA |
分类号 |
H01L21/30 |
主分类号 |
H01L21/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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