| 摘要 |
A standard cell library having a globally scalable transistor channel length is provided. In this library, the channel length of every transistor within a cell can be globally scaled, within a predetermined range, without changing cell functionality, cell size, or cell terminal positions. Such a cell library advantageously addresses the intra-generational redesign problem, since cell channel lengths in library cells can be decreased as fabrication technology evolves, without requiring intra-generational redesign of existing circuit layouts. Preferably, this change in channel length is obtained by altering a single mask layer of the library design (e.g., the mask for the poly-silicon layer).
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